IXTP26P10T Datasheet - IXYS

IXTP26P10T Power MOSFET

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings - 100 V - 100 V.

IXTP26P10T Features

* International Standard Packages

* Avalanche Rated

* Extended FBSOA

* Fast Intrinsic Diode

* Low RDS(ON) and QG Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High-Side Switching

* Push Pull Amplifiers

* DC Choppers

* A

IXTP26P10T Datasheet (285.29 KB)

IXTP26P10T Datasheet Preview — Preview of IXTP26P10T PDF

Datasheet Details

Part number:

IXTP26P10T

Manufacturer:

IXYS

File Size:

285.29 KB

Description:

Power mosfet.

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IXTP26P10T Power MOSFET IXYS

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