IXTP16N50PM Datasheet - IXYS

IXTP16N50PM Power MOSFET

Advance Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) IXTP16N50PM VDSS = ID25 = RDS(on) ≤ 500V 7.5A 420mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTPM) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°.

IXTP16N50PM Features

* Plastic Overmolded Tab for Electrical Isolation International Standard Package Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Mo

IXTP16N50PM Datasheet (184.83 KB)