IXTP12N65X2M Datasheet (IXYS)

IXTP12N65X2M, Power MOSFET

X2-Class Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTP12N65X2M Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting To

IXTP12N65X2M Features

* International Standard Package

* Plastic Overmolded Tab

* Low RDS(ON) and QG

* Avalanche Rated

* 2500V~ Electrical Isolation

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode