IXTP06N120P Datasheet - IXYS

IXTP06N120P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA06N120P IXTP06N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 0.6 1.2 0.6 50 10 42 -55 +150 150 -55 +150 A A A mJ V/ns W C C C M.

IXTP06N120P Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Switch-Mode and Resonant-Mode Power Supplies

IXTP06N120P Datasheet (270.69 KB)

IXTP06N120P Datasheet Preview — Preview of IXTP06N120P PDF

Datasheet Details

Part number:

IXTP06N120P

Manufacturer:

IXYS

File Size:

270.69 KB

Description:

Power mosfet.

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TAGS

IXTP06N120P Power MOSFET IXYS

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