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Preliminary Technical Information
X-Class Power MOSFET
N-Channel Enhancement Mode
IXTP32N65X IXTQ32N65X IXTH32N65X
VDSS = ID25 = RDS(on)
650V 32A 135m
TO-220AB (IXTP)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM IS ID25, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-3P TO-247
Maximum Ratings 650 650
V V
30 V 40 V
32 A 64 A
30 V/ns
500 W
-55 ... +150 150
-55 ... +150
C C C
300 °C 260 °C
1.13 / 10
Nm/lb.in
3.0 g 5.5 g 6.
IXTH32N65X Datasheet
