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IXTA12N65X2 - Power MOSFET

IXYS

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Datasheet Details

Part number	IXTA12N65X2
Manufacturer	IXYS
File Size	204.03 KB
Description	Power MOSFET
Datasheet	IXTA12N65X2-IXYS.pdf

IXTA12N65X2 Product details

Features

International Standard Packages.
Low RDS(ON) and QG.
Avalanche Rated.
Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 2.5 4.5 V 100 nA 5 A 50 A 300 m Advantages.
High Power Den.

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Published: Aug 16, 2016 |