IXHH40N150HV Datasheet - IXYS

IXHH40N150HV 1500V MOS Gated Thyristor

Preliminary Technical Information 1500V MOS Gated Thyristor IXHH40N150HV VDM A = 1500V G K TO-247HV Symbol VDM VGK VGK ITSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, 1μs TC = 25°C, 10μs TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 1500 V ±30 V ±40 V 7.6 kA 3.5 kA 695 W -55 +150 °C 150 °C -55 +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in .

IXHH40N150HV Features

* Very High Voltage Package

* Very High Current Capability Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Capacitive Discharge Circuits

* Ignition Circuits

IXHH40N150HV Datasheet (196.16 KB)