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IXGK35N120B - IGBT

IXYS

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Datasheet Details

Part number	IXGK35N120B
Manufacturer	IXYS
File Size	40.14 KB
Description	IGBT
Datasheet	IXGK35N120B-IXYS.pdf

IXGK35N120B Product details

Features

International standard packages JEDEC TO-264 and PLUS247TM.
Low switching losses, low V(sat).
MOS Gate turn-on - drive simplicity Symbol Test Conditions BVCES VGE(th) I CES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 750 µA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 V 5V T= J 25°C TJ = 125°C 250 µA 5 mA ±100 nA TJ = 125°.

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Published: Oct 27, 2015 |