IXGJ50N60C4D1 Datasheet - IXYS

IXGJ50N60C4D1 High-Gain IGBT

High-Gain IGBT w/ Diode (Electrically Isolated Tab) Preliminary Technical Information IXGJ50N60C4D1 VCES = IC110 = V ≤ CE(sat) 600V 21A 2.50V High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load TC = 25°C 1.6.

IXGJ50N60C4D1 Features

* z Optimized for Low Switching Losses z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Anti-Parallel Ultra Fast Diode z Square RBSOA Advantages z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Speci

IXGJ50N60C4D1 Datasheet (401.97 KB)