IXGH24N120C3H1 Datasheet (IXYS) - High speed PT IGBT

IXGH24N120C3H1, High speed PT IGBT

Preliminary Technical Information GenX3TM 1200V IGBT IXGH24N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1200V 48A 4.2V 110ns Symbol VCES V CGR V GES V GEM I C25 IC100 ICM IA E AS SSOA (RBSOA) PC TJ TJM Tstg Md TL T SOLD Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C, R GE = 1MΩ Continuous Transient T C = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C T = 25°C C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped inductive load @VCE ≤ 1

IXGH24N120C3H1 Features

* International standard packages: JEDEC TO-247AD IGBT and anti-parallel FRD in one package MOS Gate turn-on - drive simplicity Sonic-FRD diode - soft recovery with low IRM Avalanche rated Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Sw