IXFT17N80Q - HiPerFET Power MOSFET

Datasheet Details

z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 800 2.0 4.5 ±100 25 1 0.60 V V nA µA mA Ω z z z IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification Advantages z.

📁 IXFT17N80Q Similar Datasheet

IXFT120N15P - Polar MOSFETs (IXYS Corporation)
IXFT12N100F - Power MOSFET (IXYS Corporation)
IXFT12N50F - HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFT13N80Q - HiPerFET Power MOSFETs (IXYS Corporation)
IXFT140N10P - N-Channel Power MOSFET (IXYS Corporation)
IXFT14N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFT150N17T2 - Power MOSFET (IXYS Corporation)
IXFT15N100Q - HiPerFET Power MOSFETs (IXYS Corporation)

Other Datasheets by IXYS

Published: Oct 27, 2013 |