IXFK52N100X Datasheet (IXYS)

IXFK52N100X, Power MOSFET

X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFK52N100X IXFX52N100X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 52 100 10 3 1250 50 -55 +150 150 -55 +150 A A A J W

IXFK52N100X Features

* International Standard Packages

* Low QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

* AC an