IXFK32N100Q3 Datasheet (IXYS)

IXFK32N100Q3, Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFK32N100Q3 IXFX32N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg L TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 32 A 96 A 32 A 2 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 50 1250 -55 +150

IXFK32N100Q3 Features

* International Standard Packages

* Low Intrinsic Gate Resistance

* Avalanche Rated

* Low Package Inductance

* Fast Intrinsic Rectifier

* Low RDS(on) and QG Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* B