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IXFH80N20Q - Power MOSFETs Q-Class

Download the IXFH80N20Q datasheet PDF. This datasheet also covers the IXFK80N20Q variant, as both devices belong to the same power mosfets q-class family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low gate charge.
  • International standard packages.
  • Epoxy meet UL 94 V-0, flammability classification.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK80N20Q_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH80N25X3 Power MOSFET
IXFH80N08 Power MOSFET
IXFH80N60X2A Power MOSFET
IXFH80N65X2 Power MOSFET
IXFH88N30P PolarHT HiPerFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q VDSS ID25 RDS(on) trr = 200 V = 80 A = 28 mW £ 200 ns Maximum Ratings 200 200 ±20 ±30 80 320 80 45 1.5 5 360 -55 ... +150 150 -55 ...
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