IXFC110N10P - PolarHT HiPerFET Power MOSFET

Datasheet Details

Part number	IXFC110N10P
Manufacturer	IXYS
File Size	114.81 KB
Description	PolarHT HiPerFET Power MOSFET
Datasheet	IXFC110N10P_IXYS.pdf

z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Advantages z z ISOPLUS220TM (IXFC) E153432 G D S TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C G = Gate S = Source D = Drain 1.6 mm (0.062 in. ) from.

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Published: Jun 16, 2010 |