IXFA8N85XHV Datasheet (IXYS)

IXFA8N85XHV, Power MOSFET

PreliminaryTechnical Information X-Class HiPERFET Power MOSFET N-Channel Enhancement Mode IXFA8N85XHV IXFP8N85X IXFQ8N85X VDSS = ID25 =  RDS(on) 850V 8A 850m TO-263HV (IXFA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 

IXFA8N85XHV Features

* International Standard Packages

* High Voltage Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Convert