IXFA230N075T2-7 Datasheet (IXYS)

IXFA230N075T2-7, Power MOSFET

Advance Technical Information TrenchT2TM HiperFETTM IXFA230N075T2-7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 75V 230A 4.2mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) fro

IXFA230N075T2-7 Features

* z International Standard Package z 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Automotive - Motor Drives - 12V Power Bus - ABS Systems z DC/DC