FBS10-12SC Datasheet (IXYS) - Silicon Carbide Schottky Rectifier Bridge

FBS10-12SC, Silicon Carbide Schottky Rectifier Bridge

Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PACTM Advanced Technical Information FBS 10-12SC VRRM = 1200 V ID(AV)M = 7 A 1 4 51 25 Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM Ptot Conditions TC = 90°C; sine 180° (per diode) TC = 90°C (bridge) TVJ = 25°C; t = 10 ms; sine 50 Hz TC = 25°C (per diode) Maximum Ratings 1200 V 3A 7A 12 A 37 W Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min.

typ.

max.

VF IR RthJC RthJS IF

FBS10-12SC Features

* Silicon Carbide Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current

* ISOPLUS i4-PACTM package - isolated back surface -