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DE375-102N12A - RF Power MOSFET

Features

  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power cycling capability.
  • IXYS advanced low Qg process.
  • Low gate charge and capacitances.
  • easier to drive.
  • faster switching.
  • Low RDS(on).
  • Very low insertion inductance (.

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Other Datasheets by IXYS (Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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♦ N-Channel Enhancement Mode ♦ Low Qg and Rg ♦ High dv/dt ♦ Nanosecond Switching ♦ 50MHz Maximum Frequency Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 DE375-102N12A RF Power MOSFET Maximum Ratings 1000 V 1000 V ±20 V ±30 V 12 A 72 A 12 A 30 mJ 5 V/ns >200 V/ns VDSS = 1000 V ID25 = 12 A RDS(on) = 0.95 Ω PDC = 940 W PDC PDHS PDAMB RthJC RthJHS Symbol VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight Tc = 25°C Derate 3.7W/°C above 25°C Tc = 25°C 940 W 425 W GATE 4.5 W DRAIN 0.16 C/W 0.
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