VWM350-0075P Datasheet - IXYS Corporation

VWM350-0075P Three phase full bridge

VWM 350-0075P Three phase full bridge with Trench MOSFETs Preliminary data L+ VDSS = 75 V RDSon = 2.3 mΩ ID25 = 340 A T1 G1 S1 G3 S3 T2 G5 S5 T3 T4 G2 G4 S4 T5 G6 S6 T6 L1 L2 L3 S2 L- MOSFETs T1 - T6 Symbol VDSS VGS ID25 ID80 ID25 ID80 TC = 25°C TC = 80°C TC = 25°C (diode) TC = 80°C (diode) Conditions TVJ = 25°C to 150°C Maximum Ratings 75 ±20 340 250 340 250 V V A A A A Applications AC drives in automobiles - electric power steering - starter generator - etc in i.

VWM350-0075P Features

* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode

* package: - high level of integration - solder terminals for PCB mounting - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless oth

VWM350-0075P Datasheet (73.85 KB)