L356 - HiPerDynFRED Epitaxial Diode with soft recovery

IXYS Corporation

Datasheet Details

Part number	L356
Manufacturer	IXYS Corporation
File Size	44.77 KB
Description	HiPerDynFRED Epitaxial Diode with soft recovery
Datasheet	L356_IXYSCorporation.pdf

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
Low cathode to tab capacitance (< 25 pF).
International standard package.
Planar passivated chips.
Very short recovery time.
Extremely low switching losses.
Low IRM-values.
Soft recovery behaviour.
Epoxy meets UL 94V-0.
Isolated and UL registered E153432.

📁 L356 Similar Datasheet

Other Datasheets by IXYS Corporation

Published: Mar 22, 2005 |