IXTP180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXTP180N055T
Manufacturer	IXYS Corporation
File Size	117.16 KB
Description	(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
Datasheet	IXTP180N055T_IXYSCorporation.pdf

z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 55 2.0 4.0 ±200 1 250 3.3 4.0 V Advantages z V nA µA µA mΩ z z Easy to mount Space savings High power density VGS = 10 V, ID =.

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Published: Sep 27, 2005 |