IXTH14N100 Datasheet - IXYS Corporation

IXTH14N100 MegaMOSTMFET

IXTH 14N100 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID25 RDS(on) = 1000 V = 14 A = 0.82 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 14 56 360 -55 +150 150 -55 +150 V V V V A A W °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. .

IXTH14N100 Features

* l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l l International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise

IXTH14N100 Datasheet (46.57 KB)