IXKG25N80C Datasheet - IXYS Corporation

IXKG25N80C CoolMOS Power MOSFET ISO264

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET VDSS = 800 V ID25 = 25 A RDS(on) = 150 mΩ Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C TC = 90°C Package lead current limit Io Io = 10A, TC = 25°C = 20A Maximum Ratings 800 ±20 25 9 45 690 0.5 6 250 -55 +150 150.

IXKG25N80C Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due t

IXKG25N80C Datasheet (525.98 KB)