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IXGT40N60B2 - HiPerFAST IGBT

Download the IXGT40N60B2 datasheet PDF. This datasheet also covers the IXGH40N60B2 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb. in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH40N60B2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT40N60B2D1 IGBT IXYS
IXGT40N60B IGBT IXYS
IXGT40N60C IGBT IXYS
IXGT40N60C2 HiPerFAST IGBT IXYS
IXGT40N60C2D1 HiPerFAST IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT45N120 High Voltage IGBT
IXGT15N120B HiPerFAST IGBT
IXGT15N120BD1 Low VCE(sat) IGBT
IXGT15N120C IGBT Lightspeed Series
IXGT15N120CD1 Low VCE(sat) IGBT

Full PDF Text Transcription

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Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 40N60B2 IXGT 40N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A < 1.7 V = 82 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 40 200 ICM = 80 300 -55 ... +150 150 -55 ... +150 300 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) C (TAB) G C E C = Collector, TAB = Collector W °C °C °C °C Features z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.
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