IXGH40N60 Datasheet (IXYS Corporation)

IXGH40N60, High speed IGBT

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A VCES 600 V 600 V IC25 75 A 75 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) P C TJ TJM T stg Md Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient TC = 25°C, limited by leads TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH T C = 25°C Mounting torque (M3) Maximum lead temperatur

IXGH40N60 Features

* l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) Applications l AC motor speed control l DC servo a