IXGA8N100 Datasheet (IXYS Corporation)

IXGA8N100, IGBT

IGBT Preliminary data sheet IXGA 8N100 IXGP 8N100 VCES = 1000 V = 16 A IC25 VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 120 W Clamped inductive load TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 16 8 32 ICM = 16 @ 0.8 VCES 54 -55 +150 150 -55 +150 300 W °C °C °C °C V V V V A A A TO-220AB (IXGP) G

IXGA8N100 Features

* International standard packages JEDEC TO-220AB and TO-263AA

* Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity Applications 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified)