IXGA42N30C3 - GenX3 300V IGBT

IXYS Corporation

Datasheet Details

z z z z Optimized for low switching losses Square RBSOA High current handling capability International standard packages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 25 500 ±100 1.54 1.54 1.85 TJ = 125°C V V μA μA nA V V Advantages z z High power density Low gate drive requirement VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 42A, VGE = 1.

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Published: May 23, 2011 |