IXGA24N120C3 - GenX3 1200V IGBT

IXYS Corporation

Datasheet Details

Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C 3.6 3.1 Characteristic Values Min. Typ. Max. 1200 2.5 5.0 100 1.5 ±100 4.2 TJ = 125°C V V μA mA nA V V z z z VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 20A, VGE = 15V, Note 2 International standard packages: JEDEC TO-247AD MOS Gate turn-on - drive simplicity Avalanche rated.

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Published: May 23, 2011 |