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IXFT80N10Q - HiPerFET Power MOSFETs

IXYS Corporation

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Datasheet Details

Part number	IXFT80N10Q
Manufacturer	IXYS Corporation
File Size	73.94 KB
Description	HiPerFET Power MOSFETs
Datasheet	IXFT80N10Q_IXYSCorporation.pdf

IXFT80N10Q Product details

Features

IXYS advanced low gate charge process.
International standard packages.
Low gate charge and capacitance - easier to drive - faster switching.
Low RDS (on).
Unclamped Inductive Switching (UIS) rated.
Molding epoxies meet UL 94 V-0 flammability classification 1.13/10 Nm/lb. in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS =.

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Published: May 23, 2011 |