IXFN73N30 Datasheet - IXYS Corporation

IXFN73N30 HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr V DSS IXFK 73 N 30 IXFN 73 N 30 ID25 RDS(on) 45 mΩ 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC =.

IXFN73N30 Features

* l International standard packages l JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification l miniBLOC with Aluminium nitride isolation l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance l Fast intri

IXFN73N30 Datasheet (156.27 KB)