IXFL34N100 Datasheet (IXYS Corporation) - HiPerFET Power MOSFET ISOPLUS264

IXFL34N100, HiPerFET Power MOSFET ISOPLUS264

HiPerFETTM Power MOSFET ISOPLUS264TM (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC VISOL Weight www.DataSheet4U.net IXFL34N100 VDSS = ID25 = RDS(on) ≤ 1000V 30A 280mΩ ISOPLUS264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt

IXFL34N100 Features

* z G D S ISOLATED TAB G = Gate S = Source D = Drain 1.6 mm (0.063 in.) from Case for 10s Plastic body for 10s Mounting Force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 260 40..120 / 9..27 2500 3000 8 Silicon Chip on Direct-Copper Bond (DCB) Substrate - High Power Dissipation - Isolated Mount