IXFK48N60P - Power MOSFET

IXYS Corporation

Datasheet Details

l l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 25 1000 135 V V nA µA µA mΩ l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power dens.

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Published: Mar 2, 2009 |