IXDN75N120 Datasheet (IXYS Corporation)

IXDN75N120, High Voltage IGBT

www.DataSheet4U.com High Voltage IGBT IXDN 75N120 VCES = 1200 V = 150 A IC25 VCE(sat) typ = 2.2 V Short Circuit SOA Capability Square RBSOA C G miniBLOC, SOT-227 B E153432 G E E E E C Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 15 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ

IXDN75N120 Features

* q q q q q q q q 50/60 Hz; IISOL £ 1 mA NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled International standard package miniBLOC Advantages q