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IXDI404 - (IXDx404) 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers

Download the IXDI404 datasheet PDF. This datasheet also covers the IXDN404 variant, as both devices belong to the same (ixdx404) 4 ampere dual low-side ultrafast mosfet drivers family and are provided as variant models within a single manufacturer datasheet.

Description

The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere CMOS high speed MOSFET drivers.

Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs and IGBT's.

Features

  • Built using the advantages and compatibility of CMOS and IXYS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXDN404_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IXDI404
Manufacturer IXYS (Littelfuse)
File Size 797.87 KB
Description (IXDx404) 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Datasheet download datasheet IXDI404 Datasheet

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXDI404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404PI 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404SI 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI404SI-16 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDI402 (IXDx402) 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers

Full PDF Text Transcription

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IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V • High Capacitive Load Drive Capability: 1800pF in <15ns • Matched Rise And Fall Times • Low Propagation Delay Time www.DataSheet4U.com • Low Output Impedance • Low Supply Current • Two Drivers in Single Chip General Description The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere CMOS high speed MOSFET drivers. Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs and IGBT's.
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