ITXP1R6N50P_IXYSCorporation.pdf
Datasheet Details
Part number:
ITXY1R6N50P, ITXP1R6N50P
Manufacturer:
IXYS Corporation
File Size:
150.58 KB
Description:
Polarhv power mosfet.
Note:
This datasheet PDF includes multiple part numbers: ITXY1R6N50P, ITXP1R6N50P.
Please refer to the document for exact specifications by model.
ITXY1R6N50P, ITXP1R6N50P, PolarHV Power MOSFET
Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTP 1R6N50P IXTY 1R6N50P VDSS ID25 RDS(on) = 500 = 1.6 ≤ 6.5 V A Ω www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 50 Ω TC = 25°C Maximum Rating
ITXY1R6N50P Features
* z Md Weight 1.13/10 Nm/lb.in. 0.8 4 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS =
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