GWM220-004P3 Datasheet - IXYS Corporation

GWM220-004P3 Three phase full bridge

www.DataSheet4U.com GWM 220-004P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 40 V RDSon = 2.0 mΩ ID25 = 190 A MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 40 ±20 190 145 125 80 V V A A A A Applications AC drives in automobiles - electric power steering -.

GWM220-004P3 Features

* MOSFETs in trench technology: - logic level gate control - low RDSon - optimized intrinsic reverse diode

* package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic

GWM220-004P3 Datasheet (80.02 KB)