GWM160-0055X1 Datasheet - IXYS Corporation

GWM160-0055X1 Three phase full Bridge

www.DataSheet.co.kr GWM 160-0055X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 55 ± 20 150 115 120 75 V V A A A A Applications AC drives in au.

GWM160-0055X1 Features

* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode

* package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic

GWM160-0055X1 Datasheet (361.02 KB)