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DSI35-12A - Rectifier Diode Avalanche Diode

Features

  • International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips q q It 2 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DS 35 DSA 35 DSI 35 DSAI 35 Rectifier Diode Avalanche Diode VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A VRSM V 900 1300 1300 1700 1900 V(BR)minÿx VRRM V 1300 1750 1950 V 800 1200 1200 1600 1800 Anode on stud DS 35-08A DS 35-12A DSA 35-12A DSA 35-16A DSA 35-18A Cathode on stud DSI 35-08A DSI 35-12A DSAI 35-12A DSAI 35-16A DSAI 35-18A DO-203 AB C A DS DSA A C DSI DSAI x Only for Avalanche Diodes A = Anode C = Cathode 1/4-28UNF Symbol IF(RMS) IF(AVM) PRSM IFSM Test Conditions TVJ = TVJM Tcase = 100°C; 180° sine DSA(I) types, TVJ = TVJM, tp = 10 ms TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.
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