DSEC60-12A Datasheet (IXYS Corporation) - HiPerFRED Epitaxial Diode

DSEC60-12A, HiPerFRED Epitaxial Diode

DSEC 60-12A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 30 A VRRM = 1200 V trr = 40 ns TO-247 AD VRSM V 1200 VRRM V 1200 Type DSEC 60-12A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 115°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 11.5 A; L = 180 µH VA = 1.25 VR typ.; f = 10 kHz; repetitive Maximum Ratings 7

DSEC60-12A Features

* q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 165 0.81.2 6 q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C