DSEC60-06B Datasheet (IXYS Corporation)

DSEC60-06B, Epitaxial Diode

DSEC 60-06A DSEC 60-06B HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 30 A VRRM = 600 V trr = 30/35 ns TO-247 AD VRSM V 600 600 VRRM V 600 600 Type DSEC 60-06A DSEC 60-06B A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM Conditions rect., d = 0.5; TC (Vers.

A) = 135°C TC (Vers.

B) = 125°C TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Both

DSEC60-06B Features

* 250 0.2 0.1 -55+175 175 -55+150 A mJ A °C °C °C W Nm g q q q q q IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mo