60N60 - IGBT

IXYS Corporation

Datasheet Details

q International standard package SOT-227B q Aluminium nitride isolation - high power dissipation q Isolation voltage 3000 V~ q Very high current, fast switching IGBT q Low V for minimum on-state CE(sat) conduction losses q MOS Gate turn-on drive simplicity q Low collector-to-case capacitance (< 50 pF) q Low package inductance (< 5 nH) - easy to drive and to protect Symbol BV CES VGE(th) ICES IGES VCE(sat) Test Conditions I C = 250 mA, V GE = 0 V IC = 250 mA, VCE = VGE VCE = 0.8.

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Published: Jan 30, 2008 |