IS64WV12816EFALL Datasheet (ISSI) - 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

IS64WV12816EFALL, 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

This highly reliable process coupled with innovative circuit design

IS64WV12816EFALL Features

* High-speed access time: 8ns, 10ns, 12ns

* Single power supply

* 1.65V-2.2V VDD(IS61/64WV12816EFALL)

* 2.4V-3.6V VDD (IS61/64WV12816EFBLL)

* Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and corr