Datasheet4U Logo Datasheet4U.com

IS62WV2568DBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS62WV2568DBLL datasheet PDF (IS62WV2568DALL included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for ultra low power cmos static ram.

Description

256K words by 8 bits.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vcc (IS62/65WV2568DALL).
  • 2.5V.
  • 3.6V Vcc (IS62/65WV2568DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • Lead-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV2568DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • IS62WV2568ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV2568BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV25616ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV25616BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV20488ALL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV20488BLL - 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV102416ALL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV102416BLL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV10248BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV1288ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
Other Datasheets by ISSI

Full PDF Text Transcription

Click to expand full text
  IS62/65WV2568DALL  IS62/65WV2568DBLL 256K x 8 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vcc (IS62/65WV2568DALL) – 2.5V–3.6V Vcc (IS62/65WV2568DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high- performance CMOS technology.
Published: |