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IS62WV25616ECLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS62WV25616ECLL datasheet PDF (IS62WV25616EALL included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for ultra low power cmos static ram.

Description

The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 3.7uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV25616EALL).
  • 2.2V-3.6V VDD (IS62/65WV25616EBLL).
  • 3.3V +/-5% VDD (IS62/65WV25616ECLL).
  • Package : 44-pin TSOP (Type II) 48-pin mini BGA.
  • Commercial, Industrial and Automotive temperature support.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV25616EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL 256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2018 KEY FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EBLL) – 3.3V +/-5% VDD (IS62/65WV25616ECLL)  Package : 44-pin TSOP (Type II) 48-pin mini BGA  Commercial, Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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