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IS62WV12816DBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS62WV12816DBLL datasheet PDF. This datasheet also covers the IS62WV12816DALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

bits.

CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vdd (IS62/65WV12816DALL).
  • 2.5V--3.6V Vdd (IS62/65WV12816DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Autotmo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV12816DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816ALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription

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IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vdd (IS62/65WV12816DALL) – 2.5V--3.6V Vdd (IS62/65WV12816DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Autotmovie temperature support • 2CS Option Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.
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