IS46TR16640B, IS43TR16640B - 1Gb DDR3 SDRAM

ISSI

IS46TR16640B Datasheet Preview — This datasheet PDF includes multiple part numbers: IS46TR16640B, IS43TR16640B. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IS46TR16640B, IS43TR16640B
Manufacturer	ISSI
File Size	3.11 MB
Description	1Gb DDR3 SDRAM
Datasheet	IS43TR16640B-ISSI.pdf
Note	This datasheet PDF includes multiple part numbers: IS46TR16640B, IS43TR16640B. Please refer to the document for exact specifications by model.

IS46TR16640B Product details

Description

- JEDEC Standard Symbol Type Function CK, CK# CKE CS# ODT RAS#.CAS#.WE# DM, (DMU), (DML) BA0 - BA2 A0 - A13 A10 / AP A12 / BC# RESET# DQ(DQL, DQU) Input Input Input Input Input Clock: CK and CK# are differential clock inputs.All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK#.Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers.Taking CKE Low provi

Features

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
High speed data transfer rates with system frequency up to 1066 MHz.
8 internal banks for concurrent operation.
8n-bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Length: 4 and 8.
Programmable Bu.

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Published: Aug 1, 2016 |