IS46TR16256EC - 4Gb DDR3 SDRAM

Datasheet Details

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
8 internal banks for concurrent operation.
8n-Bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Length: 4 and 8.
Programmable Burst Sequence: Sequential or Interleave.

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Published: Feb 17, 2024 |