IS45S32800G, IS42S32800G - 256Mb SYNCHRONOUS DRAM

ISSI

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IS45S32800G Datasheet Preview — This datasheet PDF includes multiple part numbers: IS45S32800G, IS42S32800G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IS45S32800G, IS42S32800G
Manufacturer	ISSI
File Size	731.99 KB
Description	256Mb SYNCHRONOUS DRAM
Datasheet	IS42S32800G-ISSI.pdf
Note	This datasheet PDF includes multiple part numbers: IS45S32800G, IS42S32800G. Please refer to the document for exact specifications by model.

IS45S32800G Product details

Description

A0-A11 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ31 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQM0-DQM3 Vdd Vss Vddq Vssq NC Write Enable x32 Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection 3 Integrated Silicon Solution, Inc.- www.issi.com Rev. A 07/18/2012 IS42S3280

Features

Clock frequency: 200, 166, 143 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single Power supply: 3.3V + 0.3V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
4096 refresh cycles every 16ms (A2 grade) or 64 ms.

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Published: Aug 2, 2016 |