IS45S16100F, IS42S16100F - 512K Words x 16 Bits x 2 Banks 16Mb SDRAM

ISSI

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IS45S16100F Datasheet Preview — This datasheet PDF includes multiple part numbers: IS45S16100F, IS42S16100F. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IS45S16100F, IS42S16100F
Manufacturer	ISSI
File Size	1.16 MB
Description	512K Words x 16 Bits x 2 Banks 16Mb SDRAM
Datasheet	IS42S16100F-ISSI.pdf
Note	This datasheet PDF includes multiple part numbers: IS45S16100F, IS42S16100F. Please refer to the document for exact specifications by model.

IS45S16100F Product details

Description

ISSI’s 16Mb Synchronous DRAM IS42S16100F, IS45S16100F and IS42VS16100F are each organized as a 524,288-word x 16-bit x 2-bank for improved performance.The synchronous DRAMs achieve highspeed data transfer using pipeline architecture.All inputs and outputs signals refer to the rising edge of the clock input.ADDRESS TABLE Parameter Power Supply Vdd/Vddq Refresh Count Row Addressing IS42/45S16100F IS42VS16100F 3.3V 1.8V 2K/32ms 2K/32ms A0-A10 Column Addressing Bank Addressing Precharge

Features

Clock frequency: IS42/45S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Two banks can be operated simultaneously and independently.
Dual internal bank controlled by A11 (bank select).
Single power supply: IS42/45S16100F: Vdd/Vddq = 3.3V IS42VS16100F: Vdd/Vddq = 1.8V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).

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Published: Aug 1, 2016 |